| PART |
Description |
Maker |
| LBSS138WT1G |
Power MOSFET 200 mAmps, 50 Volts
|
Leshan Radio Company
|
| 2N700007 2N7000RLRPG 2N7000 2N7000G 2N7000RLRA 2N7 |
Small Signal MOSFET 200 mAmps, 60 Volts N?Channel TO?92 200 mAMPS 60 VOLTS
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS
|
ONSEMI[ON Semiconductor]
|
| 2N7000G |
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
ON Semiconductor
|
| BS107ARL1G BS10707 |
Small Signal MOSFET 250 mAmps, 200 Volts
|
ON Semiconductor
|
| BS107A BS107ARL1G |
Small Signal MOSFET 250 mAmps, 200 Volts N.Channel TO.92
|
ON Semiconductor
|
| BS107A BS107ARLRP BS107ARLRM BS107ARL1 BS107 BS107 |
Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92
From old datasheet system
Fast Recovery Glass Passivated Rectifier Diodes
|
ONSEMI[ON Semiconductor]
|
| LBSS84WT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| MMBF0201NLT1 MMBF0201NL MMBF0201NLT1-D |
Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
|
